Recently, the third China-Europe third-generation semiconductor summit forum was held in Shenzhen. Experts and scholars at the conference believe that the third-generation semiconductor has great potential for future application and has a transformative breakthrough force. It is a breakthrough in the new round of changes in semiconductor and downstream power electronics and communications industries.
In 2018, the United States, the European Union, etc. continued to increase R&D support in the third-generation semiconductor field. International manufacturers actively and pragmatically promoted, and commercialized silicon carbide (SiC) and gallium nitride (GaN) power electronic devices are constantly being introduced, and their performance is increasing. Ascension, applications are becoming more widespread. Benefiting from the positive factors of the macro-policies of the semiconductor industry, the pursuit of capital markets, the promotion of local governments, and the extensive entry of enterprises, the third-generation semiconductor industry in China has developed steadily. However, there is still a certain gap between the material index and the device performance and the advanced level in foreign countries, and the demand for localization is urgent.
"From the perspective of module security or China's economic development, the third-generation semiconductors have huge development space and good market prospects, which has spawned a potential market of one trillion yuan." Lin Xiang, secretary of the party group of Shenzhen Science and Technology Association, believes that The third generation semiconductor is a hotspot of global semiconductor industry technology innovation and industrial development, and provides important support for the development of strategic emerging industries such as information, energy and transportation modules. In recent years, with a series of technological innovations and breakthroughs in materials, devices, processes and applications, the third generation of semiconductors has come to the turning point from research and development to industry.
"As long as there is electricity, semiconductors will be used." Wen Yu, head of the vehicle regulation semiconductor business of the National New Energy Vehicle Technology Innovation Center, pointed out that the development of new energy vehicles is the only way to transform China's automobile industry, and will also build a new automobile industry. Ecological chain. In the future, automotive semiconductors will become the biggest driver in the global semiconductor market. Among them, the application prospect of silicon carbide in the field of new energy vehicles will be greatly improved with the development of technology.
"The various characteristics of silicon carbide are better than silicon. The device has high frequency, high efficiency and high temperature advantages. It will be widely used in white goods, rail transit, medical equipment and other fields in the future." General Manager of Shenzhen Basic Semiconductor Co., Ltd. According to wei wei, the relevant data shows that the market capacity of the entire silicon carbide power device is 500 million US dollars in 2018, and the annual compound annual growth rate of the market capacity will exceed 30%. As far as the current status of domestic silicon carbide development is concerned, the third generation of semiconductor materials has been closely following the international frontier, providing substrate and epitaxial industrialization. In the design and manufacture of automotive applications, there is still a gap between China and the international advanced level. Several universities can manufacture device samples, and three or four companies can mass produce diodes. However, only basic semiconductors can mass produce silicon carbide MOSFETs. China's "core" for casting silicon carbide.